STMicroelectronics STY100NS20FD

Part No.:
STY100NS20FD
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
IC-MAX.COMSTY100NS20FD.pdf
Description:
MOSFET N-CH 200V 100A MAX247
Quantity:

Unit Price:$0

Ext Price:$0

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STY100NS20FD Information

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Attribute value
Manufacturer:
STMicroelectronics
Series:
MESH OVERLAY™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
360 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
450W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
MAX247™
Datasheet:
IC-MAX.COMSTY100NS20FD.pdf
Image STY100NS20FD
Part Number STY100NS20FD
Manufacturer STMicroelectronics
Series MESH OVERLAY™
Package/Case TO-247-3
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 450W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package MAX247™
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