STMicroelectronics STV250N55F3

Part No.:
STV250N55F3
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
PowerSO-10 Exposed Bottom Pad
Datasheet:
IC-MAX.COMSTV250N55F3.pdf
Description:
MOSFET N-CH 55V 200A 10POWERSO
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Unit Price:$0

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STV250N55F3 Information

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Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ III
Package/Case:
PowerSO-10 Exposed Bottom Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
10-PowerSO
Datasheet:
IC-MAX.COMSTV250N55F3.pdf
Image STV250N55F3
Part Number STV250N55F3
Manufacturer STMicroelectronics
Series STripFET™ III
Package/Case PowerSO-10 Exposed Bottom Pad
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 10-PowerSO
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