STMicroelectronics STPSC4H065D

Part No.:
STPSC4H065D
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
IC-MAX.COMSTPSC4H065D.pdf
Description:
DIODE SIL CARB 650V 4A TO220AC
Quantity:

Unit Price:$0

Ext Price:$0

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STPSC4H065D Information

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Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
1.75 V @ 4 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Capacitance @ Vr, F:
200pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-40°C ~ 175°C
Datasheet:
IC-MAX.COMSTPSC4H065D.pdf
Image STPSC4H065D STPSC4H065DI STPSC4H065DLF
Part Number STPSC4H065D STPSC4H065DI STPSC4H065DLF
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Series - - ECOPACK®2
Package/Case TO-220-2 TO-220-2 Insulated, TO-220AC 8-PowerVDFN
Packaging Tube Tube Tape & Reel (TR)
Product Status Active Active Active
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 4 A 1.75 V @ 4 A 1.55 V @ 4 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns - 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 200pF @ 0V, 1MHz - 245pF @ 0V, 1MHz
Grade - - -
Qualification - - -
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AC TO-220AC ins PowerFlat™ (8x8) HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C
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