STMicroelectronics STH272N6F7-6AG

Part No.:
STH272N6F7-6AG
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Description:
MOSFET N-CH 60V 180A H2PAK-6
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Unit Price:$0

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STH272N6F7-6AG Information

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Manufacturer:
STMicroelectronics
Series:
STripFET™ F7
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
333W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
H2PAK-6
Image STH272N6F7-6AG
Part Number STH272N6F7-6AG
Manufacturer STMicroelectronics
Series STripFET™ F7
Package/Case TO-263-7, D2PAK (6 Leads + Tab)
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
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