STMicroelectronics STD80N6F6

Part No.:
STD80N6F6
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC-MAX.COMSTD80N6F6.pdf
Description:
MOSFET N-CH 60V 80A DPAK
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Unit Price:$0

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STD80N6F6 Information

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Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™ VI
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7480 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
120W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Datasheet:
IC-MAX.COMSTD80N6F6.pdf
Image STD80N6F6
Part Number STD80N6F6
Manufacturer STMicroelectronics
Series DeepGATE™, STripFET™ VI
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7480 pF @ 25 V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package DPAK
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