Shenzhen Slkormicro Semicon Co., Ltd. SL10N10A

Part No.:
SL10N10A
Manufacturer:
Shenzhen Slkormicro Semicon Co., Ltd.
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Description:
100V 1 N-CHANNEL 3.1W10ASOT-223-
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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SL10N10A Information

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Manufacturer:
Shenzhen Slkormicro Semicon Co., Ltd.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
95mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1070 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223
Image SL10N10A
Part Number SL10N10A
Manufacturer Shenzhen Slkormicro Semicon Co., Ltd.
Series -
Package/Case TO-261-4, TO-261AA
Packaging
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1070 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.1W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-223
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Step1:Prepare product
Step1:Prepare product
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Step2:Vacuum packaging
Step3:Anti-static bag
Step3:Anti-static bag
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Step4:Individual package
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Step5:Packaging box
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Step6:Barcode shipping label
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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

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