Rohm Semiconductor SCT3030KLGC11
- Part No.:
- SCT3030KLGC11
- Manufacturer:
- Rohm Semiconductor
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SCT3030KLGC11.pdf
- Description:
- SICFET N-CH 1200V 72A TO247N
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
SCT3030KLGC11 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Rohm Semiconductor
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id:
- 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs:
- 131 nC @ 18 V
- Vgs (Max):
- +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2222 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 339W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247N
- Datasheet:
-
SCT3030KLGC11.pdf
| Image |  |
| Part Number | SCT3030KLGC11 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2222 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 339W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
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