Rohm Semiconductor RUU002N05T106

Part No.:
RUU002N05T106
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
IC-MAX.COMRUU002N05T106.pdf
Description:
MOSFET N-CH 50V 200MA UMT3
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Unit Price:$0

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RUU002N05T106 Information

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
25 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
200mW (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
UMT3
Datasheet:
IC-MAX.COMRUU002N05T106.pdf
Image RUU002N05T106
Part Number RUU002N05T106
Manufacturer Rohm Semiconductor
Series -
Package/Case SC-70, SOT-323
Packaging Tape & Reel (TR)
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package UMT3
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