Rohm Semiconductor RQ7G080BGTCR

Part No.:
RQ7G080BGTCR
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
8-SMD, Flat Leads
Datasheet:
IC-MAX.COMRQ7G080BGTCR.pdf
Description:
NCH 40V 8A, TSMT8, POWER MOSFET
Quantity:

Unit Price:$0

Ext Price:$0

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RQ7G080BGTCR Information

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Attribute value
Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
8-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
10.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
1.1W (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT8
Datasheet:
IC-MAX.COMRQ7G080BGTCR.pdf
Image RQ7G080BGTCR
Part Number RQ7G080BGTCR
Manufacturer Rohm Semiconductor
Series -
Package/Case 8-SMD, Flat Leads
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSMT8
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