Rohm Semiconductor RFN10BGE3STL
- Part No.:
- RFN10BGE3STL
- Manufacturer:
- Rohm Semiconductor
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
RFN10BGE3STL.pdf
- Description:
- DIODE GEN PURP 350V 10A TO252GE
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
RFN10BGE3STL Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Rohm Semiconductor
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 350 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 350 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252GE
- Operating Temperature - Junction:
- 150°C
- Datasheet:
-
RFN10BGE3STL.pdf
| Image |  |
| Part Number | RFN10BGE3STL |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 350 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 350 V |
| Capacitance @ Vr, F | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252GE |
| Operating Temperature - Junction | 150°C |
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