Qorvo UF4C120070B7SSB

Part No.:
UF4C120070B7SSB
Manufacturer:
Qorvo
Category:
FETs, MOSFETs
Package:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Datasheet:
IC-MAX.COMUF4C120070B7SSB.pdf
Description:
1200V/70MO,SICFET,G4,TO263-7
Quantity:

Unit Price:$0

Ext Price:$0

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UF4C120070B7SSB Information

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Attribute value
Manufacturer:
Qorvo
Series:
-
Package/Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging:
Bulk
Product Status:
Active
FET Type:
P-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
25.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
12V
Rds On (Max) @ Id, Vgs:
91mOhm @ 20A, 12V
Vgs(th) (Max) @ Id:
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
37.8 nC @ 15 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
183W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK-7L
Datasheet:
IC-MAX.COMUF4C120070B7SSB.pdf
Image UF4C120070B7SSB
Part Number UF4C120070B7SSB
Manufacturer Qorvo
Series -
Package/Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging Bulk
Product Status Active
FET Type P-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 25.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 91mOhm @ 20A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 37.8 nC @ 15 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 800 V
FET Feature -
Power Dissipation (Max) 183W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK-7L
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