PN Junction Semiconductor P3M12160K3
- Part No.:
- P3M12160K3
- Manufacturer:
- PN Junction Semiconductor
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
P3M12160K3.pdf
- Description:
- SICFET N-CH 1200V 19A TO-247-3
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
P3M12160K3 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- PN Junction Semiconductor
- Series:
- P3M
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A
- Drive Voltage (Max Rds On, Min Rds On):
- 15V
- Rds On (Max) @ Id, Vgs:
- 192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id:
- 2.4V @ 2.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- +21V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 110W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3L
- Datasheet:
-
P3M12160K3.pdf
| Image |  |
| Part Number | P3M12160K3 |
| Manufacturer | PN Junction Semiconductor |
| Series | P3M |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 19A |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 192mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id | 2.4V @ 2.5mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | +21V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 110W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3L |
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