Panjit International Inc. PJMB130N65EC_R2_00601

Part No.:
PJMB130N65EC_R2_00601
Manufacturer:
Panjit International Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMPJMB130N65EC_R2_00601.pdf
Description:
650V/ 130MOHM / 29A/ EASY TO DRI
Quantity:

Unit Price:$0

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PJMB130N65EC_R2_00601 Information

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Manufacturer:
Panjit International Inc.
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Cut Tape (CT)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 10.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1920 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
235W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263
Datasheet:
IC-MAX.COMPJMB130N65EC_R2_00601.pdf
Image PJMB130N65EC_R2_00601
Part Number PJMB130N65EC_R2_00601
Manufacturer Panjit International Inc.
Series -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Cut Tape (CT)
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 10.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 400 V
FET Feature -
Power Dissipation (Max) 235W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263
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