onsemi NVMYS016N06CTWG

Part No.:
NVMYS016N06CTWG
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
SOT-1023, 4-LFPAK
Datasheet:
IC-MAX.COMNVMYS016N06CTWG.pdf
Description:
POWER MOSFET 60 V, 16M33A, SINGL
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Unit Price:$0

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NVMYS016N06CTWG Information

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Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-1023, 4-LFPAK
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10.9A (Ta), 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
482 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 35.7W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK4 (5x6)
Datasheet:
IC-MAX.COMNVMYS016N06CTWG.pdf
Image NVMYS016N06CTWG
Part Number NVMYS016N06CTWG
Manufacturer onsemi
Series -
Package/Case SOT-1023, 4-LFPAK
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10.9A (Ta), 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 482 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 35.7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
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