onsemi NVC160N120SC1

Part No.:
NVC160N120SC1
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
Die
Datasheet:
IC-MAX.COMNVC160N120SC1.pdf
Description:
SILICON CARBIDE MOSFET, NCHANNEL
Quantity:

Unit Price:$0

Ext Price:$0

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NVC160N120SC1 Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id:
4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 20 V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
665 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
119W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Datasheet:
IC-MAX.COMNVC160N120SC1.pdf
Image NVC160N120SC1
Part Number NVC160N120SC1
Manufacturer onsemi
Series -
Package/Case Die
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V
FET Feature -
Power Dissipation (Max) 119W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package Die
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