onsemi NTC160N120SC1
- Part No.:
- NTC160N120SC1
- Manufacturer:
- onsemi
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
NTC160N120SC1.pdf
- Description:
- SILICON CARBIDE MOSFET, CHANNEL,
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
NTC160N120SC1 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 20V
- Rds On (Max) @ Id, Vgs:
- 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id:
- 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 20 V
- Vgs (Max):
- +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 665 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 119W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Datasheet:
-
NTC160N120SC1.pdf
| Image |  |
| Part Number | NTC160N120SC1 |
| Manufacturer | onsemi |
| Series | - |
| Package/Case | Die |
| Packaging | Bulk |
| Product Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 12A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
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