onsemi MTW32N20E

Part No.:
MTW32N20E
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
IC-MAX.COMMTW32N20E.pdf
Description:
MOSFET N-CH 200V 32A TO247
Quantity:

Unit Price:$0

Ext Price:$0

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MTW32N20E Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
180W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Datasheet:
IC-MAX.COMMTW32N20E.pdf
Image MTW32N20E MTW32N20EG
Part Number MTW32N20E MTW32N20EG
Manufacturer onsemi onsemi
Series - -
Package/Case TO-247-3 TO-247-3
Packaging Tube Tube
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 16A, 10V 75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 25 V 5000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 180W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 TO-247
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