onsemi MMBTH10-4LT1G

Part No.:
MMBTH10-4LT1G
Manufacturer:
onsemi
Category:
Bipolar RF Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
IC-MAX.COMMMBTH10-4LT1G.pdf
Description:
RF TRANS NPN 25V 800MHZ SOT23-3
Quantity:

Unit Price:$0

Ext Price:$0

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MMBTH10-4LT1G Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
25V
Frequency - Transition:
800MHz
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 4mA, 10V
Current - Collector (Ic) (Max):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Datasheet:
IC-MAX.COMMMBTH10-4LT1G.pdf
Image MMBTH10LT1G MMBTH10LT3G MMBTH10LT1 MMBTH10 MMBTH10-4LT1G
Part Number MMBTH10LT1G MMBTH10LT3G MMBTH10LT1 MMBTH10 MMBTH10-4LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Series - - * - -
Package/Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active Obsolete Obsolete Active
Transistor Type NPN NPN - NPN NPN
Voltage - Collector Emitter Breakdown (Max) 25V 25V - 25V 25V
Frequency - Transition 650MHz 650MHz - 650MHz 800MHz
Noise Figure (dB Typ @ f) - - - - -
Gain - - - - -
Power - Max 225mW 225mW - 225mW 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 60 @ 4mA, 10V - 60 @ 4mA, 10V 120 @ 4mA, 10V
Current - Collector (Ic) (Max) - - - 50mA -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 SOT-23-3 (TO-236)
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