onsemi FDS5690-NBBM009A

Part No.:
FDS5690-NBBM009A
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMFDS5690-NBBM009A.pdf
Description:
MOSFET N-CH 60V 7A 8SOIC
Quantity:

Unit Price:$0

Ext Price:$0

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FDS5690-NBBM009A Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1107 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Datasheet:
IC-MAX.COMFDS5690-NBBM009A.pdf
Image FDS5690 FDS5690-NBBM009A
Part Number FDS5690 FDS5690-NBBM009A
Manufacturer onsemi onsemi
Series PowerTrench® -
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1107 pF @ 30 V 1107 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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