onsemi FDPF4D5N10C

Part No.:
FDPF4D5N10C
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
IC-MAX.COMFDPF4D5N10C.pdf
Description:
MOSFET N-CH 100V 128A TO220F
Quantity:

Unit Price:$0

Ext Price:$0

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FDPF4D5N10C Information

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Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
TO-220-3 Full Pack
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:
68 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5065 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.4W (Ta), 37.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3
Datasheet:
IC-MAX.COMFDPF4D5N10C.pdf
Image FDPF4D5N10C
Part Number FDPF4D5N10C
Manufacturer onsemi
Series PowerTrench®
Package/Case TO-220-3 Full Pack
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5065 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 37.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F-3
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