onsemi FDB5645

Part No.:
FDB5645
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMFDB5645.pdf
Description:
MOSFET N-CH 60V 80A D2PAK
Quantity:

Unit Price:$0

Ext Price:$0

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FDB5645 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
107 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4468 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Datasheet:
IC-MAX.COMFDB5645.pdf
Image FDB5645
Part Number FDB5645
Manufacturer onsemi
Series PowerTrench®
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4468 pF @ 30 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -65°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
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