onsemi FCP110N65F

Part No.:
FCP110N65F
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMFCP110N65F.pdf
Description:
MOSFET N-CH 650V 35A TO220-3
Quantity:

Unit Price:$0

Ext Price:$0

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FCP110N65F Information

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Manufacturer:
onsemi
Series:
FRFET®, SuperFET® II
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs:
145 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4895 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
357W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Datasheet:
IC-MAX.COMFCP110N65F.pdf
Image FCP110N65F
Part Number FCP110N65F
Manufacturer onsemi
Series FRFET®, SuperFET® II
Package/Case TO-220-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4895 pF @ 100 V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
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