NXP USA Inc. BC847QAPN147
- Part No.:
- BC847QAPN147
- Manufacturer:
- NXP USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
BC847QAPN147.pdf
- Description:
- TRANS NPN/PNP 45V 0.1A DFN1010B
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
BC847QAPN147 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- NXP USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 350mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
- Datasheet:
-
BC847QAPN147.pdf
| Image |  |
| Part Number | BC847QAPN147 |
| Manufacturer | NXP USA Inc. |
| Series | - |
| Package/Case | 6-XFDFN Exposed Pad |
| Packaging | Bulk |
| Product Status | Active |
| Transistor Type | 1 NPN, 1 PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN1010B-6 |
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