NovuSem NC1M120C75RRNG

Part No.:
NC1M120C75RRNG
Manufacturer:
NovuSem
Category:
FETs, MOSFETs
Package:
TO-263-8, DPak (7 Leads + Tab)
Datasheet:
IC-MAX.COMNC1M120C75RRNG.pdf
Description:
SiC MOSFET N 1200V 75mohm 46A 7
Quantity:

Unit Price:$0

Ext Price:$0

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NC1M120C75RRNG Information

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Manufacturer:
NovuSem
Series:
NC1M
Package/Case:
TO-263-8, DPak (7 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V
Rds On (Max) @ Id, Vgs:
75mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:
2.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
1402 pF @ 1000 V
FET Feature:
-
Power Dissipation (Max):
240W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263-7L
Datasheet:
IC-MAX.COMNC1M120C75RRNG.pdf
Image NC1M120C75RRNG
Part Number NC1M120C75RRNG
Manufacturer NovuSem
Series NC1M
Package/Case TO-263-8, DPak (7 Leads + Tab)
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 75mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 2.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1402 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 240W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7L
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