Nexperia USA Inc. PSMN015-100YLX

Part No.:
PSMN015-100YLX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
IC-MAX.COMPSMN015-100YLX.pdf
Description:
MOSFET N-CH 100V 69A LFPAK56
Quantity:

Unit Price:$0

Ext Price:$0

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PSMN015-100YLX Information

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Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
86.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6139 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
195W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Datasheet:
IC-MAX.COMPSMN015-100YLX.pdf
Image PSMN015-100YLX PSMN015-100YSFX PSMN015-60PS,127 PSMN015-110P,127 PSMN015-100P,127
Part Number PSMN015-100YLX PSMN015-100YSFX PSMN015-60PS,127 PSMN015-110P,127 PSMN015-100P,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Series - - - TrenchMOS™ TrenchMOS™
Package/Case SC-100, SOT-669 SC-100, SOT-669 TO-220-3 TO-220-3 TO-220-3
Packaging Tape & Reel (TR) Tape & Reel (TR) Tube Tube Tube
Product Status Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 110 V 100 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 55A (Tc) 50A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 7V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14.7mOhm @ 20A, 10V 15mOhm @ 15A, 10V 14.8mOhm @ 15A, 10V 15mOhm @ 25A, 10V 15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 86.3 nC @ 10 V 36 nC @ 10 V 20.9 nC @ 10 V 90 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6139 pF @ 25 V 2234 pF @ 50 V 1220 pF @ 30 V 4900 pF @ 25 V 4900 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 195W (Tc) 105W (Tc) 86W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 TO-220AB TO-220AB TO-220AB
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