Microsemi Corporation APTM50UM19SG

Part No.:
APTM50UM19SG
Manufacturer:
Microsemi Corporation
Category:
FETs, MOSFETs
Package:
J3 Module
Datasheet:
IC-MAX.COMAPTM50UM19SG.pdf
Description:
MOSFET N-CH 500V 163A MODULE
Quantity:

Unit Price:$0

Ext Price:$0

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APTM50UM19SG Information

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Attribute value
Manufacturer:
Microsemi Corporation
Series:
-
Package/Case:
J3 Module
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
163A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
19mOhm @ 81.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
492 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
22400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1136W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Module
Datasheet:
IC-MAX.COMAPTM50UM19SG.pdf
Image APTM50UM19SG
Part Number APTM50UM19SG
Manufacturer Microsemi Corporation
Series -
Package/Case J3 Module
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 81.5A, 10V
Vgs(th) (Max) @ Id 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 492 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 22400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1136W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package Module
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