Microsemi Corporation APT9F100S

Part No.:
APT9F100S
Manufacturer:
Microsemi Corporation
Category:
FETs, MOSFETs
Package:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Datasheet:
IC-MAX.COMAPT9F100S.pdf
Description:
MOSFET N-CH 1000V 9A D3PAK
Quantity:

Unit Price:$0

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APT9F100S Information

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Product attributes
Attribute value
Manufacturer:
Microsemi Corporation
Series:
POWER MOS 8™
Package/Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2606 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
337W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D3PAK
Datasheet:
IC-MAX.COMAPT9F100S.pdf
Image APT9F100S
Part Number APT9F100S
Manufacturer Microsemi Corporation
Series POWER MOS 8™
Package/Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2606 pF @ 25 V
FET Feature -
Power Dissipation (Max) 337W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D3PAK
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