Microsemi Corporation APT18M80S

Part No.:
APT18M80S
Manufacturer:
Microsemi Corporation
Category:
FETs, MOSFETs
Package:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Datasheet:
IC-MAX.COMAPT18M80S.pdf
Description:
MOSFET N-CH 800V 19A D3PAK
Quantity:

Unit Price:$0

Ext Price:$0

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APT18M80S Information

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Product attributes
Attribute value
Manufacturer:
Microsemi Corporation
Series:
POWER MOS 8™
Package/Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
3760 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
500W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D3PAK
Datasheet:
IC-MAX.COMAPT18M80S.pdf
Image APT18M80S
Part Number APT18M80S
Manufacturer Microsemi Corporation
Series POWER MOS 8™
Package/Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3760 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D3PAK
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