Microchip Technology MSC360SMA120SA
- Part No.:
- MSC360SMA120SA
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
MSC360SMA120SA.pdf
- Description:
- MOSFET SIC 1200 V 360 MOHM TO-26
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
MSC360SMA120SA Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 20V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 5A, 20V
- Vgs(th) (Max) @ Id:
- 3.14V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 20 V
- Vgs (Max):
- +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 255 pF @ 1000 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Datasheet:
-
MSC360SMA120SA.pdf
| Image |  |
| Part Number | MSC360SMA120SA |
| Manufacturer | Microchip Technology |
| Series | - |
| Package/Case | - |
| Packaging | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 20V |
| Vgs(th) (Max) @ Id | 3.14V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 255 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | - |
| Supplier Device Package | - |
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