Microchip Technology MSC025SMA120B4

Part No.:
MSC025SMA120B4
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-247-4
Datasheet:
IC-MAX.COMMSC025SMA120B4.pdf
Description:
TRANS SJT N-CH 1200V 103A TO247
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Unit Price:$0

Ext Price:$0

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MSC025SMA120B4 Information

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:
232 nC @ 20 V
Vgs (Max):
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
3020 pF @ 1000 V
FET Feature:
-
Power Dissipation (Max):
500W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4
Datasheet:
IC-MAX.COMMSC025SMA120B4.pdf
Image MSC025SMA120B4N MSC025SMA120B4
Part Number MSC025SMA120B4N MSC025SMA120B4
Manufacturer Microchip Technology Microchip Technology
Series - -
Package/Case TO-247-4 TO-247-4
Packaging Tube Tube
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 113A (Tc) 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V 20V
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 5V @ 3mA 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 20 V 232 nC @ 20 V
Vgs (Max) +23V, -10V +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3633 pF @ 1000 V 3020 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 577W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4
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