Microchip Technology APT56M50B2
- Part No.:
- APT56M50B2
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3 Variant
- Datasheet:
-
APT56M50B2.pdf
- Description:
- MOSFET N-CH 500V 56A T-MAX
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
APT56M50B2 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-247-3 Variant
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 220 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 780W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- T-MAX™
- Datasheet:
-
APT56M50B2.pdf
| Image |  |
| Part Number | APT56M50B2 |
| Manufacturer | Microchip Technology |
| Series | - |
| Package/Case | TO-247-3 Variant |
| Packaging | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ |
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