IXYS IXFB40N110Q3

Part No.:
IXFB40N110Q3
Manufacturer:
IXYS
Category:
FETs, MOSFETs
Package:
TO-264-3, TO-264AA
Datasheet:
IC-MAX.COMIXFB40N110Q3.pdf
Description:
MOSFET N-CH 1100V 40A PLUS264
Quantity:

Unit Price:$0

Ext Price:$0

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IXFB40N110Q3 Information

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Manufacturer:
IXYS
Series:
HiPerFET™, Q3 Class
Package/Case:
TO-264-3, TO-264AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1100 V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
260mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:
300 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
14000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1560W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PLUS264™
Datasheet:
IC-MAX.COMIXFB40N110Q3.pdf
Image IXFB40N110Q3
Part Number IXFB40N110Q3
Manufacturer IXYS
Series HiPerFET™, Q3 Class
Package/Case TO-264-3, TO-264AA
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1560W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PLUS264™
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