Infineon Technologies IST026N10NM5AUMA1

Part No.:
IST026N10NM5AUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
5-PowerSFN
Datasheet:
IC-MAX.COMIST026N10NM5AUMA1.pdf
Description:
TRENCH >=100V PG-HSOF-5
Quantity:

Unit Price:$0

Ext Price:$0

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IST026N10NM5AUMA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
5-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
27A (Ta), 248A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 148µA
Gate Charge (Qg) (Max) @ Vgs:
125 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6300 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 313W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOF-5-4
Datasheet:
IC-MAX.COMIST026N10NM5AUMA1.pdf
Image IST026N10NM5AUMA1
Part Number IST026N10NM5AUMA1
Manufacturer Infineon Technologies
Series OptiMOS™ 5
Package/Case 5-PowerSFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 248A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 148µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 313W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-5-4
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