Infineon Technologies IRLR8259TRPBF

Part No.:
IRLR8259TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC-MAX.COMIRLR8259TRPBF.pdf
Description:
MOSFET N-CH 25V 57A DPAK
Quantity:

Unit Price:$0

Ext Price:$0

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IRLR8259TRPBF Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 13 V
FET Feature:
-
Power Dissipation (Max):
48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)
Datasheet:
IC-MAX.COMIRLR8259TRPBF.pdf
Image IRLR8259TRPBF
Part Number IRLR8259TRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 13 V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA (DPAK)
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