Infineon Technologies IRL40B212

Part No.:
IRL40B212
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMIRL40B212.pdf
Description:
MOSFET N-CH 40V 195A TO220AB
Quantity:

Unit Price:$0

Ext Price:$0

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IRL40B212 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®, StrongIRFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
137 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8320 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
231W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
IC-MAX.COMIRL40B212.pdf
Image IRL40B212
Part Number IRL40B212
Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
Package/Case TO-220-3
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 25 V
FET Feature -
Power Dissipation (Max) 231W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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