Infineon Technologies IRFU3910PBF

Part No.:
IRFU3910PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
IC-MAX.COMIRFU3910PBF.pdf
Description:
MOSFET N-CH 100V 16A IPAK
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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IRFU3910PBF Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
640 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)
Datasheet:
IC-MAX.COMIRFU3910PBF.pdf
Image IRFU3910PBF
Part Number IRFU3910PBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)
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