Infineon Technologies IRF3708

Part No.:
IRF3708
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMIRF3708.pdf
Description:
MOSFET N-CH 30V 62A TO220AB
Quantity:

Unit Price:$0

Ext Price:$0

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IRF3708 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.8V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2417 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
87W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
IC-MAX.COMIRF3708.pdf
Image IRF3708STRL IRF3708 IRF3708S IRF3708L IRF3708SPBF
Part Number IRF3708STRL IRF3708 IRF3708S IRF3708L IRF3708SPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® HEXFET® HEXFET® HEXFET®
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I2PAK, TO-262AA TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR) Tube Tube Tube Tube
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 62A (Tc) 62A (Tc) 62A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 2.8V, 10V 2.8V, 10V 2.8V, 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 12mOhm @ 15A, 10V 12mOhm @ 15A, 10V 12mOhm @ 15A, 10V 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V 24 nC @ 4.5 V 24 nC @ 4.5 V 24 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2417 pF @ 15 V 2417 pF @ 15 V 2417 pF @ 15 V 2417 pF @ 15 V 2417 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 87W (Tc) 87W (Tc) 87W (Tc) 87W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Through Hole Surface Mount Through Hole Surface Mount
Supplier Device Package D2PAK TO-220AB D2PAK TO-262 D2PAK
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