Infineon Technologies IPD65R660CFDATMA2

Part No.:
IPD65R660CFDATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC-MAX.COMIPD65R660CFDATMA2.pdf
Description:
MOSFET N-CH 700V 6A TO252-3-313
Quantity:

Unit Price:$0

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IPD65R660CFDATMA2 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD2
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
615 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
63W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-313
Datasheet:
IC-MAX.COMIPD65R660CFDATMA2.pdf
Image IPD65R660CFDATMA2
Part Number IPD65R660CFDATMA2
Manufacturer Infineon Technologies
Series CoolMOS™ CFD2
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 100 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
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