Infineon Technologies IPD15N06S2L64ATMA2

Part No.:
IPD15N06S2L64ATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC-MAX.COMIPD15N06S2L64ATMA2.pdf
Description:
MOSFET N-CH 55V 19A TO252-31
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Unit Price:$0

Ext Price:$0

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IPD15N06S2L64ATMA2 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
354 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
47W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11
Datasheet:
IC-MAX.COMIPD15N06S2L64ATMA2.pdf
Image IPD15N06S2L64ATMA2
Part Number IPD15N06S2L64ATMA2
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 354 pF @ 25 V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
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