Infineon Technologies IGLT65R045D2ATMA1

Part No.:
IGLT65R045D2ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
16-PowerSOP Module
Datasheet:
IC-MAX.COMIGLT65R045D2ATMA1.pdf
Description:
IGLT65R045D2ATMA1
Quantity:

Unit Price:$0

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IGLT65R045D2ATMA1 Information

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Manufacturer:
Infineon Technologies
Series:
CoolGaN™
Package/Case:
16-PowerSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
1.6V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 3 V
Vgs (Max):
-10V
Input Capacitance (Ciss) (Max) @ Vds:
430 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
124W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-16-8
Datasheet:
IC-MAX.COMIGLT65R045D2ATMA1.pdf
Image IGLT65R045D2ATMA1
Part Number IGLT65R045D2ATMA1
Manufacturer Infineon Technologies
Series CoolGaN™
Package/Case 16-PowerSOP Module
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 3 V
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 400 V
FET Feature -
Power Dissipation (Max) 124W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-16-8
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