Infineon Technologies IDL10G65C5XUMA2
- Part No.:
- IDL10G65C5XUMA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- 4-PowerTSFN
- Datasheet:
-
IDL10G65C5XUMA2.pdf
- Description:
- DIODE SIL CARB 650V 10A VSON-4
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
IDL10G65C5XUMA2 Information
- Specifications
- Product Details
- Comparison
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- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- 4-PowerTSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 180 µA @ 650 V
- Capacitance @ Vr, F:
- 300pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VSON-4
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Datasheet:
-
IDL10G65C5XUMA2.pdf
| Image |  |
| Part Number | IDL10G65C5XUMA2 |
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™+ |
| Package/Case | 4-PowerTSFN |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-VSON-4 |
| Operating Temperature - Junction | -55°C ~ 150°C |
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