Infineon Technologies BSP149H6906XTSA1

Part No.:
BSP149H6906XTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
IC-MAX.COMBSP149H6906XTSA1.pdf
Description:
MOSFET N-CH 200V 660MA SOT223-4
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Unit Price:$0

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BSP149H6906XTSA1 Information

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Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel, Depletion Mode
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:
1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
430 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4
Datasheet:
IC-MAX.COMBSP149H6906XTSA1.pdf
Image BSP149H6906XTSA1
Part Number BSP149H6906XTSA1
Manufacturer Infineon Technologies
Series SIPMOS®
Package/Case TO-261-4, TO-261AA
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel, Depletion Mode
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
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