Infineon Technologies BSO4822

Part No.:
BSO4822
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMBSO4822.pdf
Description:
MOSFET N-CH 30V 12.7A 8SO
Quantity:

Unit Price:$0

Ext Price:$0

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BSO4822 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:
2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs:
26.2 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1640 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8
Datasheet:
IC-MAX.COMBSO4822.pdf
Image BSO4822
Part Number BSO4822
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs 26.2 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-DSO-8
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