Infineon Technologies BSC010N04LSCATMA1

Part No.:
BSC010N04LSCATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
IC-MAX.COMBSC010N04LSCATMA1.pdf
Description:
MOSFET N-CH 40V 282A
Quantity:

Unit Price:$0

Ext Price:$0

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BSC010N04LSCATMA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
282A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
133 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9500 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
139W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Datasheet:
IC-MAX.COMBSC010N04LSCATMA1.pdf
Image BSC010N04LSCATMA1
Part Number BSC010N04LSCATMA1
Manufacturer Infineon Technologies
Series -
Package/Case -
Packaging Tape & Reel (TR)
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 20 V
FET Feature -
Power Dissipation (Max) 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type -
Supplier Device Package -
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