Infineon Technologies AUIRF2903ZL

Part No.:
AUIRF2903ZL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
IC-MAX.COMAUIRF2903ZL.pdf
Description:
MOSFET N-CH 30V 160A TO262
Quantity:

Unit Price:$0

Ext Price:$0

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AUIRF2903ZL Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
240 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6320 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
231W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262
Datasheet:
IC-MAX.COMAUIRF2903ZL.pdf
Image AUIRF2903ZL
Part Number AUIRF2903ZL
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6320 pF @ 25 V
FET Feature -
Power Dissipation (Max) 231W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-262
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