Infineon Technologies 62-0095PBF

Part No.:
62-0095PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
IC-MAX.COM62-0095PBF.pdf
Description:
MOSFET N-CH 20V 10A/12A 8SOIC
Quantity:

Unit Price:$0

Ext Price:$0

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62-0095PBF Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
-
Datasheet:
IC-MAX.COM62-0095PBF.pdf
Image 62-0063PBF 62-0203PBF 62-0095PBF 62-0136PBF 62-0218PBF
Part Number 62-0063PBF 62-0203PBF 62-0095PBF 62-0136PBF 62-0218PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET® - - *
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - - -
Packaging Tube Tube Tube Tube Tube
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel P-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 12 V 12 V 20 V 30 V -
Current - Continuous Drain (Id) @ 25°C 15A (Ta) 16A (Ta) 10A (Ta), 12A (Tc) 19A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V 1.8V, 4.5V 10V 10V -
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 4.5V 7mOhm @ 16A, 4.5V 13.4mOhm @ 10A, 10V 4.5mOhm @ 19A, 10V -
Vgs(th) (Max) @ Id 1.9V @ 250µA 900mV @ 250µA 2.55V @ 250µA 2.25V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 91 nC @ 4.5 V 11 nC @ 4.5 V 44 nC @ 4.5 V -
Vgs (Max) ±12V ±8V - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 6 V 8676 pF @ 10 V 900 pF @ 10 V 3710 pF @ 15 V -
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2W 2.5W -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TA) -
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package 8-SO 8-SO - - -
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