What is the Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

What is the Additional Feature ?

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Name: RFP10N15L
Brand: Harris Corporation
SKU: RFP10N15L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Harris Corporation RFP10N15L

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Part No.:: RFP10N15L

Manufacturer:: Harris Corporation

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: RFP10N15L.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: Add To Cart Add To RFQ list

Unit Price:$0

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RFP10N15L Information

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Product attributes: Attribute value

Manufacturer:: Harris Corporation

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 5A, 5V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

Datasheet:: RFP10N15L.pdf

Image
Part Number	RFP10N15L
Manufacturer	Harris Corporation
Series	-
Package/Case	TO-220-3
Packaging	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	300mOhm @ 5A, 5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3

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