Goford Semiconductor GT1K2P15S
- Part No.:
- GT1K2P15S
- Manufacturer:
- Goford Semiconductor
- Category:
- FETs, MOSFETs
- Package:
- -
- Description:
- MOSFET P-CH 150V 5A 3W 150M(MAX)
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
GT1K2P15S Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Goford Semiconductor
- Series:
- Trench
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- 20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3275 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
| Image |  |
| Part Number | GT1K2P15S |
| Manufacturer | Goford Semiconductor |
| Series | Trench |
| Package/Case | - |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 4.5V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3275 pF @ 75 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | - |
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