Goford Semiconductor GT011N03D5E

Part No.:
GT011N03D5E
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMGT011N03D5E.pdf
Description:
MOSFET N-CH ESD 30V 209A DFN5*6-
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Unit Price:$0

Ext Price:$0

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GT011N03D5E Information

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Attribute value
Manufacturer:
Goford Semiconductor
Series:
SGT
Package/Case:
8-PowerTDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
209A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
0.95mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5950 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
89W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (4.9x5.75)
Datasheet:
IC-MAX.COMGT011N03D5E.pdf
Image GT011N03D5E GT011N03D5E
Part Number GT011N03D5E GT011N03D5E
Manufacturer Goford Semiconductor Goford Semiconductor
Series SGT -
Package/Case 8-PowerTDFN 8-PowerTDFN
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 209A (Tc) 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.95mOhm @ 10A, 10V 0.95mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±20V ±18V
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 15 V 6503 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 89W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-DFN (4.9x5.75) 8-DFN (4.9x5.75)
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