Goford Semiconductor G700P06J

Part No.:
G700P06J
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
IC-MAX.COMG700P06J.pdf
Description:
MOSFET P-CH 60V 23A TO-251
Quantity:

Unit Price:$0

Ext Price:$0

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G700P06J Information

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Product attributes
Attribute value
Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251
Datasheet:
IC-MAX.COMG700P06J.pdf
Image G700P06J G700P06J
Part Number G700P06J G700P06J
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube Tube
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 6A, 10V 70mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1465 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-251 TO-251
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